つくばリポジトリ (Tulips-R) > 130 数理物質科学研究科 (Graduate School of Pure and Applied Sciences) > 04 物質創成先端科学専攻 (Frontier Science) >
Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material
ac response of quantum point contacts with a split-gate configuration
Origin of high solubility of silicon in La2O3: A first-principles study
Theoretical Study of the Time-Dependent Phenomena on a Two-Dimensional Electron Gas Weakly Coupled with a Discrete Level
Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
